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Japan HIT solar cells
Posted on February 4th, 2010 No commentsJapan HIT solar cells
Japan HIT solar photovoltaic conversion rate high with nikon en-el3e battery
Recently, Japan’s Sanyo Electric Co. said it developed the company’s amorphous silicon-germanium mixed heterojunction (HIT) solar cells at the research stage reached 22% of the photoelectric conversion rate, creating more than 100 square centimeters and practical class size HIT solar nikon en-el4 battery photoelectric conversion rate of a new record.
It is learned that, HIT solar cell is a kind of crystalline silicon-based panels and the use made of amorphous silicon thin-film hybrid solar cells. Such solar cells per unit area of the generating capacity to maintain the world’s leading standard. Sanyo’s researchers developed a new cleaning technology, this technology enables single crystal silicon surface cleanliness higher, while inhibiting formation of the amorphous silicon layer on the surface of single crystal silicon damage. Through these improvements, the dell 8N544 battery power output of power loss decreased.
In addition, the researchers also by adjusting the cell surface of micron bump size, a more full use of sunlight. It is understood that the photoelectric conversion rate of solar cells is directly related to the cost of solar power generation system, so competing countries in the world dell C1295 to study this subject.